Preparation and characterization of RuO2 thin films from Ru(CO)2(tmhd)2 by metalorganic chemical vapor deposition

被引：23

作者：

Chen, RS

Huang, YS ^{[1
]}

Chen, YL

Chi, Y

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Tsing Hua Univ, Dept Chem, Hsinchu 300, Taiwan

来源：

THIN SOLID FILMS | 2002年 / 413卷 / 1-2期

关键词：

ruthenium dioxide; chemical vapor deposition; thin film; scanning electron microscopy; resistivity; Raman scattering; X-ray diffraction;

D O I：

10.1016/S0040-6090(02)00343-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new metalorganic ruthenium compound which contained two beta-diketonate and two CO ligands arranged in cis-disposition was used in preparation of high quality ruthenium dioxide (RuO2) thin films by cold-wall metalorganic chemical vapor deposition. A detailed characterization of the films including scanning electron microscopy (SEM), electrical resistivity, Raman scattering and X-ray diffraction measurements were carried out. The surface morphology of the films was investigated by SEM, from which a columnar growth pattern was observed using a cross-sectional scanning electron micrograph analysis. The resistivity measurement shows a metallic conducting characteristic, while Raman study indicates the formation of a high quality, nearly stress-free RuO2 film. In addition, changes of structural and electrical properties after thermal annealing are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：85 / 91

页数：7

共 26 条

[1] X-ray photoelectron spectroscopy and micro-Raman analysis of conductive RuO2 thin films [J].