Broadband polarization insensitive semiconductor optical amplifiers

被引：1

作者：

Czaban, JA ^{[1
]}

Thompson, DA ^{[1
]}

Robinson, BJ ^{[1
]}

机构：

[1] McMaster Univ, Ctr Electrophotn Mat & Devices, Hamilton, ON L8S 4L7, Canada

来源：

PHOTONICS: DESIGN, TECHNOLOGY, AND PACKAGING | 2004年 / 5277卷

关键词：

semiconductor optical amplifier; asymmetric quantum wells; tensile strain; polarization insensitivity;

D O I：

10.1117/12.523964

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A broadband width semiconductor optical amplifier is reported using an asymmetric quantum well structure. By applying tensile strain to the quantum wells it is possible to both increase the optical bandwith whilst reducing the polarization sensitivity. The effects of the ordering of the asymmetric quantum wells, length of the device and carrier density all affect the performance of the device. Using the asymmetric structure, a 90nm region of polarization sensitivity less than 1.2dB within the -3dB band width is achieved.

引用

页码：65 / 72

页数：8

共 9 条

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