High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

被引：47

作者：

Chang, W. H. ^{[2
]}

Lee, C. H. ^{[2
]}

Chang, P. ^{[2
]}

Chang, Y. C. ^{[2
]}

Lee, Y. J. ^{[2
]}

Kwo, J. ^{[1
]}

Tsai, C. C. ^{[3
]}

Hong, J. M. ^{[3
]}

Hsu, C. -H. ^{[4
]}

Hong, M. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[3] HUGA Optotech Inc, Taichung, Taiwan

[4] Natl Synchrotron Radiat Res Ctr, Hsinchu, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Crystal structure; Single crystal growth; Molecular beam epitaxy; Gadolinium compounds; GaN; Dielectric materials; MOLECULAR-BEAM EPITAXY; GATE DIELECTRICS; GROWTH; GA2O3(GD2O3); HETEROSTRUCTURE; MOSFETS; OXIDE; LAYER; Y2O3;

D O I：

10.1016/j.jcrysgro.2008.10.079

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MBE-grown single-crystal Gd2O3 epitaxially on GaN has exhibited excellent thermal stability, withstanding rapid thermal annealing (RTA) at 1100 degrees C. The high-K dielectric Gd2O3 thin film 10 nm thick has a monoclinic phase with a high degree of crystallinity, characterized by X-ray diffraction using synchrotron radiation. The orientation relationship is ((4) over bar 0 2)(Gd2O3) ||(0 0 0 1)(GaN) and < 0 1 0 >(Gd2O3) || < 2 (1) over bar (1) over bar 0 >(GaN). Interface between Gd2O3 and GaN remains atomically sharp after the RTA, as demonstrated using X-ray reflectivity and high-resolution transmission electron microscopy. Gd2O3/GaN metal-oxide-semiconductor capacitors show well-behaved capacitance-voltage characteristics with small dispersion and hysterisis, a high dielectric constant of similar to 17, and a low electrical leakage current density of 4.6 x 10(-9) A/cm(2) at 1 MV/cm. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：2183 / 2186

页数：4

共 24 条

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