High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

被引：48

作者：

Chang, W. H. ^{[2
]}

Lee, C. H. ^{[2
]}

Chang, P. ^{[2
]}

Chang, Y. C. ^{[2
]}

Lee, Y. J. ^{[2
]}

Kwo, J. ^{[1
]}

Tsai, C. C. ^{[3
]}

Hong, J. M. ^{[3
]}

Hsu, C. -H. ^{[4
]}

Hong, M. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[3] HUGA Optotech Inc, Taichung, Taiwan

[4] Natl Synchrotron Radiat Res Ctr, Hsinchu, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Crystal structure; Single crystal growth; Molecular beam epitaxy; Gadolinium compounds; GaN; Dielectric materials; MOLECULAR-BEAM EPITAXY; GATE DIELECTRICS; GROWTH; GA2O3(GD2O3); HETEROSTRUCTURE; MOSFETS; OXIDE; LAYER; Y2O3;

D O I：

10.1016/j.jcrysgro.2008.10.079

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MBE-grown single-crystal Gd2O3 epitaxially on GaN has exhibited excellent thermal stability, withstanding rapid thermal annealing (RTA) at 1100 degrees C. The high-K dielectric Gd2O3 thin film 10 nm thick has a monoclinic phase with a high degree of crystallinity, characterized by X-ray diffraction using synchrotron radiation. The orientation relationship is ((4) over bar 0 2)(Gd2O3) ||(0 0 0 1)(GaN) and < 0 1 0 >(Gd2O3) || < 2 (1) over bar (1) over bar 0 >(GaN). Interface between Gd2O3 and GaN remains atomically sharp after the RTA, as demonstrated using X-ray reflectivity and high-resolution transmission electron microscopy. Gd2O3/GaN metal-oxide-semiconductor capacitors show well-behaved capacitance-voltage characteristics with small dispersion and hysterisis, a high dielectric constant of similar to 17, and a low electrical leakage current density of 4.6 x 10(-9) A/cm(2) at 1 MV/cm. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：2183 / 2186

页数：4

共 24 条

[1] MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN [J].

Chang, Y. C. ;

Lee, Y. J. ;

Chiu, Y. N. ;

Lin, T. D. ;

Wu, S. Y. ;

Chiu, H. C. ;

Kwo, J. ;

Wang, Y. H. ;

Hong, M. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 :390-393

[2] Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric [J].

Chang, Y. C. ;

Chang, W. H. ;

Chiu, H. C. ;

Tung, L. T. ;

Lee, C. H. ;

Shiu, K. H. ;

Hong, M. ;

Kwo, J. ;

Hong, J. M. ;

Tsai, C. C. .

APPLIED PHYSICS LETTERS, 2008, 93 (05)

[3] Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN [J].

Chang, Y. C. ;

Chiu, H. C. ;

Lee, Y. J. ;

Huang, M. L. ;

Lee, K. Y. ;

Hong, M. ;

Chiu, Y. N. ;

Kwo, J. ;

Wang, Y. H. .

APPLIED PHYSICS LETTERS, 2007, 90 (23)

[4] Structural and electrical characteristics of Ga2O3(Gd2O3)/GaAs under high temperature annealing [J].

Chen, C. P. ;

Lee, Y. J. ;

Chang, Y. C. ;

Yang, Z. K. ;

Hong, M. ;

Kwo, J. ;

Lee, H. Y. ;

Lay, T. S. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (10)

[5] Structure of Gd2O3 films epitaxially grown on GaAs(100) and GaN(0001) surfaces [J].

Flückiger, T ;

Erbudak, M ;

Hensch, A ;

Weisskopf, Y ;

Hong, M ;

Kortan, AR .

SURFACE AND INTERFACE ANALYSIS, 2002, 34 (01) :441-444

[6]

Gila BP, 2001, PHYS STATUS SOLIDI A, V188, P239, DOI 10.1002/1521-396X(200111)188:1<239::AID-PSSA239>3.0.CO

[7]

2-D

[8] CMOS integration of epitaxial Gd2O3 high-k gate dielectrics [J].

Gottlob, H. D. B. ;

Echtermeyer, T. ;

Mollenhauer, T. ;

Efavi, J. K. ;

Schmidt, M. ;

Wahlbrink, T. ;

Lemme, M. C. ;

Kurz, H. ;

Czernohorsky, M. ;

Bugiel, E. ;

Osten, H. -J ;

Fissel, A. .

SOLID-STATE ELECTRONICS, 2006, 50 (06) :979-985

[9] Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes [J].

Hong, M ;

Anselm, KA ;

Kwo, J ;

Ng, HM ;

Baillargeon, JN ;

Kortan, AR ;

Mannaerts, JP ;

Cho, AY ;

Lee, CM ;

Chyi, JI ;

Lay, TS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1453-1456

[10] High-quality nanothickness single-crystal Sc2O3 film grown on Si(111) -: art. no. 251902 [J].

Hong, M ;

Kortan, AR ;

Chang, P ;

Huang, YL ;

Chen, CP ;

Chou, HY ;

Lee, HY ;

Kwo, J ;

Chu, MW ;

Chen, CH ;

Goncharova, LV ;

Garfunkel, E ;

Gustafsson, T .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1687,2

← 1 2 3 →