CdTe solar cell performance under high-intensity light irradiance

被引：21
|
作者：
Li, Wei [1 ,2 ]
Yang, Ruilong [1 ,2 ]
Wang, Deliang [1 ,2 ,3 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, CAS Key Lab Energy Convers Mat, Hefei 230026, Anhui, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2014年 / 123卷
基金：
中国国家自然科学基金;
关键词：
CdTe; Solar cell; Concentrator solar cell; Electric resistance; High-intensity light irradiance; Thin film; BACK CONTACT; EFFICIENCY; CDS/CDTE;
D O I：
10.1016/j.solmat.2014.01.021
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Polycrystalline CdTe solar cell performance under high-intensity light irradiance was studied. The short-circuit current density and the open-circuit voltage were increased linearly and the fill factor and the efficiency of CdTe solar cells were decreased with increased light irradiance intensity. Analytical analysis was carried out to analyze the factors which induced the decreased fill factor. It was found that under 1-Sun light irradiation, the series resistance of both the CdTe and the front electrode (F-doped SnO2, FTO, sheet resistance of 14 Omega/sq) films contributed comparably to the series resistance. Under high-intensity irradiance of 25.9 Sun, the resistance of the CdTe layer was decreased to one hundredth value of that under 1-Sun irradiance, while the resistance of FTO remained unchanged. The experimental results clearly demonstrated that the electrical resistance of the FTO electrode was the limiting factor for the CdTe cell efficiency working under concentrated light irradiance. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：249 / 254
页数：6
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