Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

被引：0
作者：
Gridchin, V. O. [1 ,2 ,3 ]
Reznik, R. R. [1 ,2 ,3 ]
Kotlyar, K. P. [3 ]
Shugabaev, T. M. [1 ]
Dragunova, A. S. [4 ]
V. Kryzhanovskaya, N. [4 ]
Cirlin, G. E. [1 ,2 ,3 ]
机构：
[1] Alferov Univ, St Petersburg, Russia
[2] IAI RAS, St Petersburg, Russia
[3] St Petersburg State Univ, St Petersburg, Russia
[4] Natl Res Univ Higher Sch Econ, St Petersburg, Russia
来源：
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2022年 / 15卷 / 03期
关键词：
ular beam epitaxy; NANOWIRES;
D O I：
10.18721/JPM.153.361
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work, we study the influence of the substrate temperature on the structural and optical properties of InGaN nanostructures synthesized by plasma-assisted molecular beam epitaxy. We show that ternary InGaN alloys with a chemical composition within the miscibility gap can be synthesized under N-rich growth conditions at the substrate temperatures from 600 to 670 degrees C. The results can be used to create visible and white light-emitting diodes on Si substrates.
引用
收藏
页码：311 / 314
页数：4
相关论文
共 9 条
  • [1] Roadmap on solar water splitting: current status and future prospects
    Chu, Sheng
    Li, Wei
    Yan, Yanfa
    Hamann, Thomas
    Shih, Ishiang
    Wang, Dunwei
    Mi, Zetian
    [J]. NANO FUTURES, 2017, 1 (02)
  • [2] Gridchin V. O., 2020, J PHYS C SERIES IOP, V1482
  • [3] Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE
    Gridchin, Vladislav O.
    Kotlyar, Konstantin P.
    Reznik, Rodion R.
    Dragunova, Anna S.
    Kryzhanovskaya, Natalia, V
    Lendyashova, Vera V.
    Kirilenko, Demid A.
    Soshnikov, Ilya P.
    Shevchuk, Dmitrii S.
    Cirlin, George G.
    [J]. NANOTECHNOLOGY, 2021, 32 (33)
  • [4] Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
    Ha Quoc Thang Bui
    Velpula, Ravi Teja
    Jain, Barsha
    Aref, Omar Hamed
    Hoang-Duy Nguyen
    Lenka, Trupti Ranjan
    Hieu Pham Trung Nguyen
    [J]. MICROMACHINES, 2019, 10 (08)
  • [5] Solid phase immiscibility in GaInN
    Ho, IH
    Stringfellow, GB
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (18) : 2701 - 2703
  • [6] Complete composition tunability of InGaN nanowires using a combinatorial approach
    Kuykendall, Tevye
    Ulrich, Philipp
    Aloni, Shaul
    Yang, Peidong
    [J]. NATURE MATERIALS, 2007, 6 (12) : 951 - 956
  • [7] Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting
    Lin, Jing
    Wang, Wenliang
    Li, Guoqiang
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (52)
  • [8] Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
    Roche, Elissa
    Andre, Yamina
    Avit, Geoffrey
    Bougerol, Catherine
    Castelluci, Dominique
    Reveret, Francois
    Gil, Evelyne
    Medard, Francois
    Leymarie, Joel
    Jean, Theo
    Dubrovskii, Vladimir G.
    Trassoudaine, Agnes
    [J]. NANOTECHNOLOGY, 2018, 29 (46)
  • [9] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE
    Tabata, Takuya
    Paek, Jihyun
    Honda, Yoshio
    Yamaguchi, Masahito
    Amano, Hiroshi
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 646 - 649
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