Role of Defects and Surface States in the Carrier Transport and Nonlinearity of the Diode Characteristics in PbS/ZnO Quantum Dot Solar Cells

The roles of bulk surface states and interfacial defects are probed experimentally using a combination of current-voltage, capacitance voltage, and impedance measurements. The critical importance of the quality of both the film and interfaces is evident in current voltage measurements where shunting and interface states result in large dark currents and the Subsequent loss of J(SC). These properties are shown to be critically related to the nature and role of the PbS QD interface with the (nominally) ohmic gold contact. Specifically, the nonideality of this interface results in the formation of an electric field and therefore a Schottky barrier that opposes the transport of carriers across the conventional ZnO-PbS CQD system. Nonidealities in the structure and absorber layer are also reflected in nonmonotonic behavior and dispersion in C-V measurements with trapping processes on the CQD surfaces, and the ZnO/PbS and PbS/Au interfaces also affecting the carrier dynamics, which is reflected in the response time of these systems under different biases,