On the electrical and interface properties of nanostructured CdTe Schottky diodes electrodeposited from an ionic liquid medium

被引：12

作者：

Chauhan, Khushbu R. ^{[1
]}

Mukhopadhyay, Indrajit ^{[1
]}

机构：

[1] Pandit Deendayal Petr Univ, Sch Solar Energy, Gandhinagar 382007, Gujarat, India

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 22期

关键词：

THIN-FILM; CHLORIDE; CADMIUM; BATH;

D O I：

10.1063/1.4883768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple and cost effective method to fabricate nearly ideal Schottky diode out of p-CdTe semiconductor is discussed. The efficient re-use of ionic liquid for the deposition of nano-microstructures of CdTe is also disclosed. The I-V characteristic of the diode configured as Cu:FTO: p-CdTe: Cu showed the rectifying nature with a small forward voltage (0.8 V) and a rectification ratio of 6 x 10(3) at 4.8 V. Theoretical model suggests the diffusion controlled carrier transport process with an ideality factor of 1.1 up to a small forward voltage range whereas the thermionic transport with generation recombination dominates at higher voltages. The interface properties of p-CdTe and FTO were studied by impedance spectroscopy under varied bias conditions to electrically represent the diode. (C) 2014 AIP Publishing LLC.

引用

页数：8

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