Measurement of single-event effects on a large number of commercial DRAMs

被引：11
作者：
Sasada, T. [1 ]
Ichikawa, S.
Kanai, T.
机构：
[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan
[2] Space Engn Dev Co Ltd, Tsukuba, Ibaraki 3050032, Japan
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 04期
关键词：
CMOS memory integrated circuits; DRAM chips; error correction; proton radiation effects; single-event effects; space vehicle electronics;
D O I：
10.1109/TNS.2006.880928
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To evaluate the characteristics of commercial memory devices for space use, the Japan Aerospace Exploration Agency (JAXA) launched a Solid State Recorder (SSR) on the Mission Demonstration test Satellite-1 (MDS-1 or 'Tsubasa") into geo-stationary transfer orbit (GTO) in February 2002. Passing through the radiation belt exposed the MDS-1 to severe radiation environment in every orbit. This flight experiment allowed the observation of Single-Event Upsets (SEU) and Total Ionizing Dose (TID) effect on a large number of, stacked 64 Wit Dynamic Random Access Memories (DRAM). As a result, the actual SEU rates could be calculated, and the capabilities of two types of on-the-fly Error Detection and Correction (EDAC) mechanisms were confirmed. This paper presents the results of the space experiment-of SSR, focusing especially on SEU analysis.
引用
收藏
页码：1806 / 1812
页数：7
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