An improved push-pull Class-E RF tuned power amplifier with low maximum transistor current

被引：3
|
作者：
Hu, HX [1 ]
Li, YM [1 ]
Wang, ZH [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
2001 4TH INTERNATIONAL CONFERENCE ON ASIC PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICASIC.2001.982564
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper proposes an improved push-pull Class-E power amplifier with low maximum transistor current, which is a critical parameter for power amplifiers in low voltage design. Moreover, from its push-pull configuration, low harmonic distortion and large optimum load are achieved. These improved performances are confirmed by theoretical analysis and HSPICE simulation. The proposed design is suitable for the wireless RF transceiver in low voltage design.
引用
收藏
页码：322 / 325
页数：4
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