Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice

被引：14

作者：

Gu Yi ^{[1
,2
]}

Zhang Yong-Gang ^{[1
]}

Li Ai-Zhen ^{[1
]}

Wang Kai ^{[1
,2
]}

Li Cheng ^{[1
,2
]}

Li Yao-Yao ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 07期

基金：

中国国家自然科学基金;

关键词：

MULTIPLE-QUANTUM WELLS; GROWTH; SINGLE;

D O I：

10.1088/0256-307X/26/7/077808

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effects of strain compensation are investigated by using twenty periods of highly strain-compensated InGaAs/InAlAs superlattice. The lattice mismatches of individual layers are as high as about 1%, and the thicknesses are close to critical thicknesses. X-ray diffraction measurements show that lattice imperfectness is not serious but still present, though the structural parameters are within the range of theoretical design criteria for structural stability. Rough interfaces and composition fluctuations are the primary causes for lattice imperfectness. Photoluminescence measurements show the large thermally activated nonradiative recombination in the sample. In addition, the recombination process gradually evolves from excitonic recombination at lower temperatures to band-to-band recombination at higher temperatures, which should be considered in device applications.

引用

页数：4

共 18 条

[1] Strain effects, electronic parameters, and electronic structures in modulation-doped InxGa1-xAs/InyAl1-yAs coupled step-rectangular quantum wells [J].