Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

被引：5

作者：

Dong, Yuanwei ^{[1
]}

Mooney, Patricia M. ^{[2
]}

Cai, Feiyang ^{[1
]}

Anjum, Dalaver ^{[3
]}

Ur-Rehman, Naeem ^{[4
]}

Zhang, Xixiang ^{[4
]}

Xia, Guangrui ^{[1
]}

机构：

[1] Univ British Columbia, Dept Mat Engn, Vancouver, BC V6T 1Z4, Canada

[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[3] KAUST, Adv Imaging & Characterizat Lab, Thuwal 23599, Makkah, Saudi Arabia

[4] KAUST, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 10期

基金：

加拿大自然科学与工程研究理事会;

关键词：

MISFIT DISLOCATIONS; MONTE-CARLO; MOBILITY; MULTILAYERS; TEMPERATURE; DIFFUSION; BEHAVIOR; DEFECTS; MOSFETS; FILMS;

D O I：

10.1149/2.0041410jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800 degrees C and 840 degrees C), the degree of relaxation, R, reached a "plateau", while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data. (C) 2014 The Electrochemical Society. All rights reserved.

引用

页码：P302 / P309

页数：8

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