A 10-GHz Bias Modulated Class-E Power Amplifier in 90-nm CMOS

被引：0

作者：

Chen, Sheng-Ting ^{[1
]}

Lee, Yi-Chun ^{[1
]}

Liu, Jenny Yi-Chun ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Dept Elect Engn, Hsinchu 30013, Taiwan

来源：

2016 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2016年

关键词：

class-E; switching amplifier; bias modulation; DC-DC CONVERTER; SUPPLY MODULATOR; OUTPUT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated high efficiency 10-GHz class-E power amplifier prototype is demonstrated in CMOS 90-nm technology. It reaches an output power of 11.7 dBm, an output 1 dB compression point of 10.32 dBm, and a power-added-efficiency of 40.36% with a supply voltage of 1.5 V. A multiple-output DC-DC converter is proposed to provide several different regulated voltages to the power amplifier to optimize the efficiency at different power levels, and can be further extended as part of an envelope elimination and restoration system.

引用

页数：3

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