Coherent diffraction imaging of a single epitaxial InAs nanowire using a focused x-ray beam

被引：53

作者：

Diaz, A. ^{[1
,2
]}

Mocuta, C. ^{[1
]}

Stangl, J. ^{[2
]}

Mandl, B. ^{[2
]}

David, C. ^{[3
]}

Vila-Comamala, J. ^{[3
]}

Chamard, V. ^{[4
,5
]}

Metzger, T. H. ^{[1
]}

Bauer, G. ^{[2
]}

机构：

[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[2] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

[3] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[4] Aix Marseille Univ, IM2NP, FST Ave Escadrille Normandie Niemen, F-13397 Marseille, France

[5] CNRS, IM2NP, FST Ave Escadrille Normandie Niemen, F-13397 Marseille, France

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 12期

关键词：

III-V semiconductors; indium compounds; nanowires; semiconductor epitaxial layers; X-ray diffraction; X-ray imaging; PHASE RETRIEVAL; CRYSTAL; GROWTH;

D O I：

10.1103/PhysRevB.79.125324

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The cross section of an InAs nanowire with a diameter of 150 nm epitaxially grown on a 111-oriented InP substrate was characterized using a combination of x-ray scanning microdiffraction and coherent diffraction imaging. Using an x-ray beam focused by a Fresnel zone plate, we were able to scan in real space and hence localize single nanowires on the substrate in the as-grown epitaxial state. For one single nanowire, the three-dimensional coherent intensity distribution in reciprocal space was mapped around the (111) InAs reflection. Using phase retrieval algorithms, the cross section of the wire was reconstructed with a spatial resolution of 8 nm along one direction.

引用

页数：5

共 27 条

[1]

ARISTOV VV, 1986, PHYS STATUS SOLIDI A, V95, P81, DOI 10.1002/pssa.2210950108

[2] Nano-resolution profiling of micro-structures using quantitative X-ray phase retrieval from Fraunhofer diffraction data [J].

Darahanau, AV ;

Nikulin, AY ;

Souvorov, A ;

Nishino, Y ;

Muddle, BC ;

Ishikawa, T .

PHYSICS LETTERS A, 2005, 335 (5-6) :494-498

[3] Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques [J].

Eymery, Joel ;

Rieutord, Francois ;

Favre-Nicolin, Vincent ;

Robach, Odile ;

Niquet, Yann-Michel ;

Froberg, Linus ;

Martensson, Thomas ;

Samuelson, Lars .

NANO LETTERS, 2007, 7 (09) :2596-2601

[4]

FAVRENICOLIN V, PHYS REV B IN PRESS, P6804

[5] PHASE RETRIEVAL ALGORITHMS - A COMPARISON [J].

FIENUP, JR .

APPLIED OPTICS, 1982, 21 (15) :2758-2769

[6]

GERCHBERG RW, 1972, OPTIK STUTTGART, V35, P235

[7] Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001) [J].

Hesse, A ;

Stangl, J ;

Holy, V ;

Roch, T ;

Bauer, G ;

Schmidt, OG ;

Denker, U ;

Struth, B .

PHYSICAL REVIEW B, 2002, 66 (08) :853211-853218

[8] Fabrication of Fresnel zone plates for hard X-rays [J].

Jefimovs, K. ;

Bunk, O. ;

Pfeiffer, F. ;

Grolimund, D. ;

van der Veen, J. F. ;

David, C. .

MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) :1467-1470

[9] Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires [J].

Larsson, Magnus W. ;

Wagner, Jakob B. ;

Wallin, Mathias ;

Hakansson, Paul ;

Froberg, Linus E. ;

Samuelson, Lars ;

Wallenberg, L. Reine .

NANOTECHNOLOGY, 2007, 18 (01)

[10] 3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a Si-rich core in Ge domes on Si(100) [J].

Malachias, A ;

Kycia, S ;

Medeiros-Ribeiro, G ;

Magalhaes-Paniago, R ;

Kamins, TI ;

Williams, RS .

PHYSICAL REVIEW LETTERS, 2003, 91 (17)

← 1 2 3 →