Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer

被引：52

作者：

Shoji, H

Nakata, Y

Mukai, K

Sugiyama, Y

Sugawara, M

Yokoyama, N

Ishikawa, H

机构：

[1] Fujitsu Laboratories Ltd.

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 02期

关键词：

crystal growth; lasers; measurement; physics; quantum-well devices; semiconductor lasers; stimulated emission; ROOM-TEMPERATURE; THRESHOLD; PHOTOLUMINESCENCE; EMISSION; INGAAS; NM;

D O I：

10.1109/2944.605654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature continuous-wave (CW) operation at the ground state has been achieved in self-formed quantum-dot lasers with multistacked dot layer, By systematic investigation, discontinuous shifts of lasing wavelength from the high-order subbands to the ground state are clearly demonstrated for the first time by varying the number of dot layers and the cavity loss, Lasers oscillating at different subbands exhibit different behaviors against temperature both in the spectral characteristics and in the threshold currents, which are strongly related to emission efficiency of quantum dots and thermal excitation of carriers to higher order subbands, High characteristic temperature over 300 ii has been achieved in a laser with high-reflection coating on both facets in the temperature range 60-200 K. Future prospects of improvement in the laser characteristics are also discussed.

引用

页码：188 / 195

页数：8

共 28 条

[1]

AHOPELTO J, 1995, P 7 IND PHOSPHL REL, P19

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[3] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[4] InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties [J].

Bimberg, D ;

Ledentsov, NN ;

Grundmann, M ;

Kirstaedter, N ;

Schmidt, OG ;

Mao, MH ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Gosele, U ;

Heydenreich, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1311-1319

[5] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS [J].

GRUNDMANN, M ;

CHRISTEN, J ;

LEDENTSOV, NN ;

BOHRER, J ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

RICHTER, U ;

GOSELE, U ;

HEYDENREICH, J ;

USTINOV, VM ;

EGOROV, AY ;

ZHUKOV, AE ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4043-4046

[6]

Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118

[7] Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers [J].

Kamath, K ;

Bhattacharya, P ;

Sosnowski, T ;

Norris, T ;

Phillips, J .

ELECTRONICS LETTERS, 1996, 32 (15) :1374-1375

[8] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

[9] Formation of coherent superdots using metal-organic chemical vapor deposition [J].

Ledentsov, NN ;

Bohrer, J ;

Bimberg, D ;

Kochnev, IV ;

Maximov, MV ;

Kopev, PS ;

Alferov, ZI ;

Kosogov, AO ;

Ruvimov, SS ;

Werner, P ;

Gosele, U .

APPLIED PHYSICS LETTERS, 1996, 69 (08) :1095-1097

[10] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

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