Selected failure mechanisms of modern power modules

被引：669
作者：
Ciappa, M [1 ]
机构：
[1] ETH, Swiss Fed Inst Technol, Integrated Syst Lab, Phys Characterizat Grp, CH-8092 Zurich, Switzerland
来源：
MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 4-5期
关键词：
D O I：
10.1016/S0026-2714(02)00042-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews the main failure mechanisms occurring in modern power modules paying special attention to insulated gate bipolar transistor devices for high-power applications. This compendium provides the main failure modes, the physical or chemical processes that lead to the failure, and reports some major technological countermeasures, which are used for realizing the very stringent reliability requirements imposed in particular by the electrical traction applications. (C) 2002 Elsevier Science Ltd. All rights reserved.
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页码：653 / 667
页数：15
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