Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions

被引：30
作者：
He, Shumin [1 ,6 ]
Liu, Guolei [1 ]
Zhu, Yinlian [2 ]
Ma, Xiuliang [2 ]
Sun, Jirong [3 ,4 ]
Kang, Shishou [1 ]
Yan, Shishen [1 ]
Chen, Yanxue [1 ]
Mei, Liangmo [1 ]
Jiao, Jun [5 ]
机构：
[1] Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China
[2] Chinese Acad Sci, Inst Met Res, Shengyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
[3] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[4] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[5] Portland State Univ, Dept Mech & Mat Engn, POB 751, Portland, OR 97207 USA
[6] Nanjing Univ Posts & Telecommun, Peter Grunberg Res Ctr, Nanjing 210003, Jiangsu, Peoples R China
来源：
RSC ADVANCES | 2017年 / 7卷 / 37期
基金：
中国国家自然科学基金;
关键词：
BEHAVIOR; ARRAYS; DIODE; FILMS;
D O I：
10.1039/c7ra02339a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Direct evidence of purely interfacial effects on resistance switching is demonstrated in Au/BiFeO3/Nd:SrTiO3(001) (Au/BFO/NSTO) Schottky junctions by reducing the thickness of ferroelectric interlayer BFO. The Au/BFO/NSTO junction shows large current rectification and hysteretic resistive switching behavior without any electroforming process. The conduction mechanism is dominated by interface-limited Fowler-Nordheim (FN) tunneling through a potential barrier formed at the BFO/NSTO interface. Measurements of polarization switching dynamics and capacitance-voltage characteristics provide direct evidence that the resistance switching in the Au/BFO/NSTO junction is ferroelectric and interfacially limited. The observed resistance switching behavior can be attributed to the ferroelectric polarization modulation of the barrier and depletion width of the p-n junction formed at the BFO/NSTO interface.
引用
收藏
页码：22715 / 22721
页数：7
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