Dynamic sheath model at pulsed-biased insulating substrates

被引:28
作者
Dai, ZL [1 ]
Wang, YN [1 ]
机构
[1] Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Electron & Ion, Dalian 116023, Peoples R China
关键词
D O I
10.1063/1.1517732
中图分类号
O59 [应用物理学];
学科分类号
摘要
Characteristics of collisionless pulse-biased sheaths are studied with a one-dimensional fluid model coupled up to an equivalent circuit model. All the time-dependent terms are included in the ion fluid equations to ensure that the model can describe the sheath dynamics over a wide range of pulse frequency, especially in the intermediate pulse frequency range. The equivalent circuit model gives the instantaneous relationship between the sheath thickness and the surface potential at an insulating substrate placed on the pulse-biased electrode. The spatiotemporal variations of the potential, ion density and electron density inside the sheath are shown numerically. Additionally, the ion energy distributions arriving at insulating substrates and the charge density accumulated on insulating substrates are calculated with the model. It is shown that some parameters such as the pulse frequency, pulse duty ratio, and amplitude of the pulse voltage applied on the electrodes play an important role not only in determining the characteristics of the sheath dynamics and the ion energy distributions at insulating substrates but also in remedying the "surface charging effect." (C) 2002 American Institute of Physics.
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页码:6428 / 6433
页数:6
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