Piezoelectric graphene field effect transistor pressure sensors for tactile sensing

被引：81

作者：

Yogeswaran, N. ^{[1
]}

Navaraj, W. T. ^{[1
]}

Gupta, S. ^{[1
]}

Liu, F. ^{[1
]}

Vinciguerra, V. ^{[2
]}

Lorenzelli, L. ^{[3
]}

Dahiya, R. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Bendable Elect & Sensing Technol BEST Grp, Glasgow G12 8QQ, Lanark, Scotland

[2] ST Microelect, I-95121 Catania, Italy

[3] Fdn Bruno Kessler, Microsyst Technol MST Grp, I-38123 Trento, Italy

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

MATRIX; TRANSPARENT;

D O I：

10.1063/1.5030545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents graphene field-effect transistor (GFET) based pressure sensors for tactile sensing. The sensing device comprises GFET connected with a piezoelectric metal-insulator-metal (MIM) capacitor in an extended gate configuration. The application of pressure on MIM generates a piezo-potential which modulates the channel current of GFET. The fabricated pressure sensor was tested over a range of 23.54-94.18 kPa, and it exhibits a sensitivity of 4.55 x 10(-3) x kPa(-1). Further, the low voltage (similar to 100 mV) operation of the presented pressure sensors makes them ideal for wearable electronic applications. (C) 2018 Author(s).

引用

页数：4

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