Engineered Mott ground state in artificial LaNiO3/(NiO)n/LaNiO3 heterostructure

被引：0

作者：

Chen, Mingjing ^{[1
]}

Ning, Xingkun ^{[1
]}

Fu, Guangsheng ^{[1
]}

Wang, Shufang ^{[1
]}

Wang, Fei ^{[2
]}

Yu, Tao ^{[3
]}

Liu, Peng ^{[1
]}

Wang, Jianglong ^{[1
]}

Liu, Wei ^{[2
]}

Zhang, Zhidong ^{[2
]}

机构：

[1] Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China

[2] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China

[3] South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 07期

基金：

中国国家自然科学基金;

关键词：

METAL-INSULATOR-TRANSITION; ENERGY ELECTRON-DIFFRACTION; THIN-FILMS; GROWTH; SUPERLATTICES; NICKELATE;

D O I：

10.7567/APEX.11.075701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Understanding and controlling the metal-insulator transition (MIT) can provide great opportunities for electronic devices. Here, artificial LaNiO3/(NiO)(n)/LaNiO3 has been synthesized. MIT temperatures have been tuned by changing the thickness of the artificial NiO insert layer. The Ni 2p core-level spectra and O K-edge have been investigated. The linear relationship between the hybridization T (or bandwidth W) and the MIT temperature has been clearly demonstrated. In this work, we realized the Mott ground state by modulating the parameters of T and the covalency W, which might be significant for the development of multifunctional materials. (C) 2018 The Japan Society of Applied Physics

引用

页数：5

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