Stabilization of the Perovskite Phase in the Y-Bi-O System By Using a BaBiO3 Buffer Layer

被引：12

作者：

Bouwmeester, Rosa Luca ^{[1
]}

de Hond, Kit ^{[1
]}

Gauquelin, Nicolas ^{[2
]}

Verbeeck, Jo ^{[2
]}

Koster, Gertjan ^{[1
]}

Brinkman, Alexander ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands

[2] Electron Microscopy Mat Res EMAT, Campus Groenenborger,Groenenborgerlaan 171, B-2020 Antwerp, Belgium

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2019年 / 13卷 / 07期

关键词：

buffer layers; perovskite oxides; pulsed laser deposition; scanning transmission electron microscopy; topological insulators; TOPOLOGICAL-INSULATOR; GROWTH; SUBSTRATE; FILM;

D O I：

10.1002/pssr.201800679

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A topological insulating phase has theoretically been predicted for the thermodynamically unstable perovskite phase of YBiO3. Here, it is shown that the crystal structure of the Y-Bi-O system can be controlled by using a BaBiO3 buffer layer. The BaBiO3 film overcomes the large lattice mismatch of 12% with the SrTiO3 substrate by forming a rocksalt structure in between the two perovskite structures. Depositing an YBiO3 film directly on a SrTiO3 substrate gives a fluorite structure. However, when the Y-Bi-O system is deposited on top of the buffer layer with the correct crystal phase and comparable lattice constant, a single oriented perovskite structure with the expected lattice constants is observed.

引用

页数：8

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