Effect of Mg doping and substrate temperature on the properties of pulsed laser deposited epitaxial Zn1-x Mg x O thin films

被引:6
作者
Shukla, Gaurav [1 ]
Khare, Alika [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Laser & Photon Lab, Gauhati 781039, India
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 96卷 / 03期
关键词
BAND-GAP; ROOM-TEMPERATURE; ALLOY-FILMS; ZNO; MGXZN1-XO;
D O I
10.1007/s00339-009-5180-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we report on the pulsed laser deposition of epitaxial (0002) oriented Zn1-x Mg (x) O thin films onto (0001) sapphire substrate in O-2 ambient at different deposition temperatures. Pulsed laser deposited Zn1-x Mg (x) O films showed (0002) oriented hexagonal wurtzite structure up to 34% of Mg concentration. The bandgap of Zn1-x Mg (x) O thin films is successfully tuned from 3.3 to 4.2 eV by adjusting the Mg concentration x=0.0 to x=0.34. Pulsed laser deposited Zn1-x Mg (x) O thin films were characterized by XRD, AFM, SEM, PL and UV-VIS spectrometer. We have also studied the effect of deposition temperature on to the structure, surface morphology and optical properties of Zn1-x Mg (x) O thin films.
引用
收藏
页码:713 / 719
页数:7
相关论文
共 18 条
  • [1] BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES
    CAPASSO, F
    [J]. SCIENCE, 1987, 235 (4785) : 172 - 176
  • [2] Confinement-enhanced biexciton binding energy in ZnO/ZnMgO multiple quantum wells
    Chia, CH
    Makino, T
    Tamura, K
    Segawa, Y
    Kawasaki, M
    Ohtomo, A
    Koinuma, H
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (12) : 1848 - 1850
  • [3] Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films
    Choopun, S
    Vispute, RD
    Yang, W
    Sharma, RP
    Venkatesan, T
    Shen, H
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (09) : 1529 - 1531
  • [4] Luminescence and nonradiative deactivation of excited states involving oxygen defect centers in polycrystalline ZnO
    Egelhaaf, HJ
    Oelkrug, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) : 190 - 194
  • [5] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
    HAYASHI, I
    PANISH, MB
    FOY, PW
    SUMSKI, S
    [J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 109 - &
  • [6] Spectroscopic ellipsometry study of Zn1-xMgxO thin films deposited on Al2O3(0001)
    Kang, JH
    Park, YR
    Kim, KJ
    [J]. SOLID STATE COMMUNICATIONS, 2000, 115 (03) : 127 - 130
  • [7] Zn0.8Mg0.2O-based metal-semiconductor-metal photodiodes on quartz for visible-blind ultraviolet detection
    Liu, K. W.
    Zhang, J. Y.
    Ma, J. G.
    Jiang, D. Y.
    Lu, Y. M.
    Yao, B.
    Li, B. H.
    Zhao, D. X.
    Zhang, Z. Z.
    Shen, D. Z.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (09) : 2765 - 2768
  • [8] The growth of ZnMgO alloy films for deep ultraviolet detection
    Liu, K. W.
    Shen, D. Z.
    Shan, C. X.
    Zhang, J. Y.
    Jiang, D. Y.
    Zhao, Y. M.
    Yao, B.
    Zhao, D. X.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (12)
  • [9] Structural and optical properties of ZnMgO thin films grown by pulsed laser deposition using ZnO-MgO multiple targets
    Maemoto, Toshihiko
    Ichiba, Nobuyasu
    Ishii, Hiroaki
    Sasa, Shigehiko
    Inoue, Masataka
    [J]. COLA'05: 8TH INTERNATIONAL CONFERENCE ON LASER ABLATION, 2007, 59 : 670 - +
  • [10] Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films
    Makino, T
    Segawa, Y
    Kawasaki, M
    Ohtomo, A
    Shiroki, R
    Tamura, K
    Yasuda, T
    Koinuma, H
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (09) : 1237 - 1239