Single photon emission dynamics of InP-InGaP quantum dots under p-shell excitation

被引：0

作者：

Nowak, A. K. ^{[1
,2
]}

Martin, M. D. ^{[1
,3
]}

van der Meulen, H. P. ^{[1
,3
]}

Ripalda, J. M. ^{[4
]}

Gonzalez, L. ^{[4
]}

Gonzalez, Y. ^{[4
]}

Vina, L. ^{[1
,3
,5
]}

Calleja, J. M. ^{[1
,3
,5
]}

机构：

[1] Univ Autonoma Madrid, CSIC SEMICUAM, Dept Fis Mat, Unidad Asociada, E-28049 Madrid, Spain

[2] CNRS, Lab Photon & Nanostruct, UPR20, F-91460 Marcoussis, France

[3] Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain

[4] CSIC, Ctr Nacl Microelect, Inst Microelect Madrid, E-28049 Madrid, Spain

[5] Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain

来源：

EPL | 2014年 / 108卷 / 01期

关键词：

ROOM-TEMPERATURE; EXCITONS; DEMAND;

D O I：

10.1209/0295-5075/108/17002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Single photon emitters based on InP/GaInP quantum dots have been studied under p-shell excitation by time-resolved photoluminescence and photon correlation spectroscopy. By tuning the excitation energy in resonance with quantum dot excited states, we observe a marked decrease of the antibunching time as a result of the increased excitation rate for decreasing energy detuning. A similar behavior is observed by increasing the pump power. The spectral dependence of the antibunching rate follows the energy profile of the excited state, as measured by photoluminescence excitation. Copyright (C) EPLA, 2014

引用

页数：5

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