Two-frequency coupled-cavity vertical-cavity surface-emitting lasers

被引:3
|
作者
Logginov, A. S. [1 ]
Rzhanov, A. G. [1 ]
Skorov, D. V. [1 ]
机构
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
关键词
semiconductor lasers; two-frequency lasers; vertical-cavity surface-emitting lasers;
D O I
10.1070/QE2006v036n06ABEH013282
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A mathematical model of a two-frequency semiconductor coupled-cavity vertical-cavity surface-emitting laser (CC-VCSEL) is developed. The wavelengths of generated modes and intensity distributions of longitudinal and transverse modes are calculated. It is shown that two-frequency generation with the difference between the radiation wavelengths varying from 0.08 to 50 nm can be obtained in AlGaAs/GaAs/InGaAs CC-VCSELs. The wavelength difference is bounded above by the reflection bandwidth of Bragg mirrors and bounded below by thermal effects in the active medium, the precision of the laser fabrication and the required output power.
引用
收藏
页码:520 / 526
页数:7
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