Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets

被引:57
作者
Kalisky, Y
Labbe, C
Waichman, K
Kravchik, L
Rachum, U
Deng, P
Xu, J
Dong, J
Chen, W
机构
[1] DN Arava, Arava Laser Lab, IL-86800 Yamin, Israel
[2] Nucl Res Ctr Negev, Laser Dept, IL-89140 Beer Sheva, Israel
[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Crystal Lab, Shanghai 201800, Peoples R China
关键词
diode pumped lasers; passive Q-switching; Yb : YAG laser;
D O I
10.1016/S0925-3467(02)00003-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the repetitive modulation in the kHz frequency domain of a passively Q-switched, diode-pumped Yb:YAG laser, by Cr4+ :YAG, Cr4+ LuAG, and Cr4+:GSGG saturable absorbers. The results presented here are focused towards the design of a passively Q-switched Yb:YAG microlaser. The free-running performance of both rod and a disk Yb:YAG is characterized and experimental parameters such as gain and loss are evaluated. These values, together with the value of the stimulated emission cross-section, e.g. sigma(cm) = 3.3 x 10(-20) cm(2) were found to fit between our experimental results and an existing numerical model which relates the experimental and physical parameters to the minimal threshold pumping power. Q-switched pulses with maximum peak power of approximate to10.4 kW, with energy of approximate to0.5 mJ/pulse, were extracted with 30% extraction efficiency. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:403 / 413
页数:11
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