Study of Radiation Resistance Property of a-IGZO Thin Film Transistors

被引：0
|
作者：
Dayananda, G. K. [1 ]
Rai, Shantharama C. [1 ]
Jayarama, A. [2 ]
Kim, Hyun Jae [3 ]
机构：
[1] Canara Engn Coll, Dept Elect & Commun Engn, Mangalore 574219, India
[2] SCEM, Dept Phys, Mangalore 575007, India
[3] Yonsei Univ, Seoul 120749, South Korea
来源：
2016 IEEE INTERNATIONAL CONFERENCE ON RECENT TRENDS IN ELECTRONICS, INFORMATION & COMMUNICATION TECHNOLOGY (RTEICT) | 2016年
关键词：
IGZO; TFT; Electron-Irradiation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants
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页码：1816 / 1819
页数：4
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