Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers

被引：9

作者：

Xiong, Jian-Yong ^{[1
]}

Xu, Yi-Qin ^{[2
]}

Zheng, Shu-Wen ^{[1
]}

Fan, Guang-Han ^{[1
]}

Zhang, Tao ^{[1
]}

机构：

[1] S China Normal Univ, Lab Nanophoton Funct Mat & Devices, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

[2] Guangdong Gen Res Inst Ind Technol, Guangzhou 510650, Guangdong, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 114卷 / 02期

基金：

中国国家自然科学基金;

关键词：

EFFICIENCY; POLARIZATION; ALLOY;

D O I：

10.1007/s00339-013-8069-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With the purpose to increase the uniformity of carrier distribution without sacrificing the enhancement of carrier injection efficiency, the light-emitting diodes (LEDs) without an electron-blocking layer (EBL) by using AlGaN step-like barriers (SLBs) is proposed and investigated numerically. The simulation results show that the enhanced electron confinement and hole injection efficiency are mainly attributed to the mitigated downward band bending induced by polarization field at the interface of the last barrier and EBL and the increased carrier distribution uniformity is due to step-like potential height for carrier of the new designed LEDs. In addition, the distribution of radiative recombination rate and the efficiency droop are markedly improved when the conventional GaN barriers are replaced by AlGaN SLBs and the EBL is removed.

引用

页码：309 / 313

页数：5

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