The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

被引：17

作者：

Fu, Yen-Chun ^{[1
]}

Peralagu, Uthayasankaran ^{[1
]}

Millar, David A. J. ^{[1
]}

Lin, Jun ^{[2
]}

Povey, Ian ^{[2
]}

Li, Xu ^{[1
]}

Monaghan, Scott ^{[2
]}

Droopad, Ravi ^{[3
]}

Hurley, Paul K. ^{[2
]}

Thayne, Iain G. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[3] Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 14期

关键词：

INTERFACE;

D O I：

10.1063/1.4980012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study reports the impact of forming gas annealing (FGA) on the electrical characteristics of sulfur passivated, atomic layer deposited Al2O3 gate dielectrics deposited on (110) oriented n- and p-doped In0.53Ga0.47As layers metal-oxide-semiconductor capacitors (MOSCAPs). In combination, these approaches enable significant Fermi level movement through the bandgap of both n-and p-doped In0.53Ga0.47As (110) MOSCAPs. A midgap interface trap density (D-it) value in the range 0.87 - 1.8 x 10(12) cm(-2)eV(-1) is observed from the samples studied. Close to the conduction band edge, a D-it value of 3.1 x 10(11) cm(-2)eV(-1) is obtained. These data indicate the combination of sulfur pre-treatment and FGA is advantageous in passivating trap states in the upper half of the bandgap of (110) oriented In0.53Ga0.47As. This is further demonstrated by a reduction in border trap density in the n-type In0.53Ga0.47As (110) MOSCAPs from 1.8 x 10(12) cm(-2) to 5.3 x 10(11) cm(-2) as a result of the FGA process. This is in contrast to the observed increase in border trap density after FGA from 7.3 x 10(11) cm(-2) to 1.4 x 10(12) cm(-2) in p-type In0.53Ga0.47As (110) MOSCAPs, which suggest FGA is not as effective in passsivating states close to the valence band edge. Published by AIP Publishing.

引用

页数：5

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