Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor with a pseudomorphic InGaAs/GaAs quantum-well base

被引：4

作者：

Tsai, JH ^{[1
]}

机构：

[1] Chien Kuo Inst Technol, Dept Elect Engn, Changhua, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 09期

关键词：

D O I：

10.1016/S0026-2714(99)00065-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new functional AlCaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well (QW) base structure is presented. Due to the insertion of an InGaAs QW between the emitter-base (E-B) junction, the valence band discontinuity can be enhanced. The excellent transistor characteristics including a high current gain of 280 and a low offset voltage of 100 mV are obtained. In addition, an interesting multiple S-shaped negative differential resistance (NDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect, (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1379 / 1387

页数：9

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