Electric-field-driven exciton vortices in transition metal dichalcogenide monolayers

被引:12
作者
Chen, Yingda [1 ,2 ]
Huang, Yongwei [1 ,2 ]
Lou, Wenkai [1 ,2 ]
Cai, Yongyong [3 ]
Chang, Kai [1 ,2 ,4 ]
机构
[1] Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China
[3] Beijing Normal Univ, Sch Math Sci, Lab Math & Complex Syst, Minist Educ, Beijing 100875, Peoples R China
[4] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
基金
中国国家自然科学基金;
关键词
BOSE-EINSTEIN CONDENSATION; MATTER PHYSICS; DARK STATES; OPTOELECTRONICS; SEMICONDUCTOR; TEMPERATURE;
D O I
10.1103/PhysRevB.102.165413
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We predict electric-field-driven exciton vortices in transition metal dichalcogenide monolayers in the BoseEinstein condensation regime. The Rashba spin-orbit coupling created by perpendicular electric fields couples the bright and dark excitons, behaves like an emerging SU(2) gauge field for excitons, and induces spatially asymmetric distribution of exciton density. We find the interplay between the dipole-dipole interaction among excitons and Rashba spin-orbit coupling leads to the phase transitions containing different vortices, from a single pair of vortices to numerous satellite vortices appearing at the edge of the sample. The exciton condensation at the K and K' valleys shows mirror-symmetric patterns composed of exciton vortices rotating oppositely, which are protected topologically by the winding numbers.
引用
收藏
页数:12
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