Mapping Defect Density in MBE Grown In0.53Ga0.47As Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

被引：13

作者：

Majumdar, Kausik ^{[1
]}

Thomas, Paul ^{[2
]}

Loh, Wei-Yip ^{[1
]}

Hung, Pui-Yee ^{[1
]}

Matthews, Ken ^{[1
]}

Pawlik, David ^{[2
]}

Romanczyk, Brian ^{[2
]}

Filmer, Matthew ^{[2
]}

Gaur, Abhinav ^{[2
]}

Droopad, Ravi ^{[3
]}

Rommel, Sean L. ^{[2
]}

Hobbs, Chris ^{[1
]}

Kirsch, Paul D. ^{[1
]}

机构：

[1] SEMATECH, Albany, NY 12203 USA

[2] Rochester Inst Technol, Dept Elect & Microelect Engn, Rochester, NY 14623 USA

[3] Texas State Univ, Dept Phys, San Marcos, TX 78666 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 06期

基金：

美国国家科学基金会;

关键词：

III-V on Si; epi defect density; Esaki diode; excess current; negative differential resistance; tunneling; BAND-GAP; EXCESS CURRENT; TUNNEL; GAAS;

D O I：

10.1109/TED.2014.2318597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growing good quality III-V epitaxial layers on Si substrate is of utmost importance to produce next generation high-performance devices in a cost effective way. In this paper, using physical analysis and electrical measurements of Esaki diodes, fabricated using molecular beam epitaxy grown In0.53Ga0.47As layers on Si substrate, we show that the valley current density is strongly correlated with the underlying epi defect density. Such a strong correlation indicates that the valley characteristics can be used to monitor the epi quality. A model is proposed to explain the experimental observations and is validated using multiple temperature diode I-V data. An excess defect density is introduced within the device using electrical and mechanical stress, both of which are found to have a direct impact on the valley current with a negligible change in the peak current characteristics, qualitatively supporting the model predictions.

引用

页码：2049 / 2055

页数：7

共 28 条

[1]

[Anonymous], IEEE IEDM

[2] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION [J].