Direct observation of subcritical fluctuations during the formation of strained semiconductor islands

被引：78
作者：
Jesson, DE
Kästner, M
Voigtländer, B
机构：
[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[2] Forschungszentrum Julich, Inst Grenzflachenforsch & Vakuumphys, D-52425 Julich, Germany
来源：
PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.84.330
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have directly imaged subcritical fluctuations during the nucleation phase of three-dimensional islands in strained layer epitaxy. The fluctuations are defect mediated and are found to be large even at low growth temperatures. We attribute the existence of large fluctuations to the time dependence of the supersaturation. This indicates classical nucleation concepts are relevant, even at low growth temperatures.
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页码：330 / 333
页数：4
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