High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

被引：118

作者：

Minami, T ^{[1
]}

Ida, S ^{[1
]}

Miyata, T ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Optoelect Device Syst R&D Ctr, Nonoichi, Ishikawa 9218501, Japan

来源：

THIN SOLID FILMS | 2002年 / 416卷 / 1-2期

关键词：

arc plasma evaporation; ZnO; ITO; GZO; thin film; TCO film;

D O I：

10.1016/S0040-6090(02)00706-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nin/min by vacuum are plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6 X 10(-4) and 2.3 X 10(-4) Omega.cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 degreesC, respectively. In addition, a resistivity as low as 1.4 X 10(-4) Omega.cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 degreesC. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：92 / 96

页数：5

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