A Review on IGBT Module Failure Modes and Lifetime Testing

被引：134

作者：

Abuelnaga, Ahmed ^{[1
]}

Narimani, Mehdi ^{[1
]}

Bahman, Amir Sajjad ^{[2
]}

机构：

[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4L8, Canada

[2] Aalborg Univ, Ctr Reliable Power Elect CORPE, DK-9220 Aalborg, Denmark

来源：

IEEE ACCESS | 2021年 / 9卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

Insulated gate bipolar transistors; Logic gates; Reliability; Metallization; Stress; Life estimation; Layout; Long-term reliability; IGBT failure modes; power cycling; lifetime models; degradation; FATIGUE-CRACK GROWTH; RELIABILITY ASSESSMENT; POWER MODULES; MECHANISMS; PREDICTION; VALIDATION; STRESS; IMPEDANCE; HUMIDITY; DEVICES;

D O I：

10.1109/ACCESS.2021.3049738

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This article focuses on failure modes and lifetime testing of IGBT modules being one of the most vulnerable components in power electronic converters. IGBT modules have already located themselves in the heart of many critical applications, such as automotive, aerospace, transportation, and energy. They are required to work under harsh operational and environmental conditions for extended target lifetime that may reach 30 to 40 years in some applications. Therefore, addressing the reliability of IGBT modules is of paramount importance. The paper provides a comprehensive review on IGBT modules dominant failure modes, and long-term reliability. A detailed discussion on accelerated testing, and lifetime and degradation characterization considering thermo-mechanical stress is also presented in details.

引用

页码：9643 / 9663

页数：21

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