Perimeter Recombination Characterization by Luminescence Imaging

被引：14

作者：

Fong, Kean Chern ^{[1
]}

Padilla, Milan ^{[2
]}

Fell, Andreas ^{[1
]}

Franklin, Evan ^{[1
]}

McIntosh, Keith R. ^{[3
]}

Kho, Teng Choon ^{[1
]}

Blakers, Andrew W. ^{[1
]}

Nebel-Jacobsen, Yona ^{[1
]}

Surve, Sachin R. ^{[1
]}

机构：

[1] Australian Natl Univ, Canberra, ACT 0200, Australia

[2] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

[3] PV Lighthouse, Coledale, NSW 2515, Australia

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2016年 / 6卷 / 01期

关键词：

Characterization; perimeter recombination; photoluminescence; photovoltaic; silicon; simulation; SILICON SOLAR-CELLS; GAAS DIODES; PHOTOLUMINESCENCE; PARAMETERS; SIMULATION; SURFACE;

D O I：

10.1109/JPHOTOV.2015.2480225

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current-voltage (J-V) curve.

引用

页码：244 / 251

页数：8

共 28 条

[1] Investigation of edge recombination effects in silicon solar cell structures using photoluminescence [J].