On the flexural creep of single-crystal silicon

被引：20

作者：

Walters, DS

Spearing, SM

机构：

[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

[2] MIT, Dept Aeronaut & Astronaut, Cambridge, MA 02139 USA

来源：

SCRIPTA MATERIALIA | 2000年 / 42卷 / 08期

关键词：

silicon; creep; high temperature; shear bands; thermally activated processes;

D O I：

10.1016/S1359-6462(99)00428-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Creep data were obtained for (100) silicon specimens loaded in four point bending in the temperature range 600-850°C and at nominal bending stress levels in the range 50-200 MPa. The creep response under these loading conditions consisted of the formation of creeping plastic hinges under the inner loading points. The deformation rate dependence on temperature was found to be governed by an Arrhenius relationship with an activation energy of 224 kJ/mol.

引用

页码：769 / 774

页数：6

共 8 条

[1]

ALEXANDER H, 1968, SOLID STATE PHYSICS

[2]

Epstein AH., 1997, 28 AIAA FLUID DYN C, V6-7

[3] CALCULATION OF STRESSES AND STRAINS IN 4-POINT BENDING CREEP TESTS [J].