Reliability evaluation of Gilbert cell mixer based on a hot-carrier stressed device degradation model

被引：2

作者：

Lin, WC ^{[1
]}

Du, LJ ^{[1
]}

King, YC ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, STAR Grp, Microelect Lab, Hsinchu 300, Taiwan

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

D O I：

10.1109/RFIC.2004.1320630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model describing the device degradation under hot-carrier stress is proposed. Combining with the original model predicting device characteristics change under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreements with both DC and AC characteristics. Reliability of mixed-mode Gilbert Cell mixer is investigated and analyzed as well.

引用

页码：387 / 390

页数：4

共 7 条

[1] IN WC, 2003, IEEE RFIC S, P377
[2] Kim CS, 1997, IEEE MTT-S, P945, DOI 10.1109/MWSYM.1997.602956
[3] Soft breakdown and hot carrier reliability of CMOS RF mixer and redesign
Li, Q
Li, W
Zhang, JL
Yuan, JS
[J]. 2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, : 399 - 402
[4] RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology
Li, Q
Zhang, JL
Li, W
Yuan, JS
Chen, Y
Oates, AS
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (09) : 1546 - 1551
[5] LIN WC, 2004, UNPUB IRPS
[6] Low voltage performance of a microwave CMOS Gilbert cell mixer
Sullivan, PJ
Xavier, BA
Ku, WH
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (07) : 1151 - 1155
[7] Yang H, 2003, INT RELIAB PHY SYM, P1

← 1 →