Electrodeposition of In-S based buffer layers for high efficiency Cu(In, Ga)Se2 based solar cells

被引:3
|
作者
Chassaing, E. [1 ]
Naghavi, N. [1 ]
Gallanti, S. [1 ]
Renou, G. [1 ]
Soro, M. [1 ]
Bouttemy, M. [2 ]
Etcheberry, A. [2 ]
Lincot, D. [1 ]
机构
[1] UMR 7174 EDF CNRS Chim Paristech, IRDEP, Inst R&D Photovolta Energy, 6 Quai Watier, F-78401 Chatou, France
[2] CNRS, UVSQ, UMR 8180, ILV,Lavoisier Inst, F-78035 Versailles, France
来源
PHOTOVOLTAICS FOR THE 21ST CENTURY 8 | 2013年 / 50卷 / 51期
关键词
THIN-FILMS; INDIUM SULFIDE; ROUTE;
D O I
10.1149/05051.0093ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Soft chemical processes such as screen printing, sol-gel, electrochemical or chemical bath-deposition, enable low cost and easily scalable processes for thin layer solar cells. For the CIGSe based solar cells, with the standard Mo/Cu(In, Ga)Se-2/CdS/i-ZnO/n(+)-ZnO structure, all layers of the p-n heterojunction and the transparent conductive oxide window can be grown by aqueous solution processes. In this work we focus on the electrochemical investigation of In-S layers. XPS analyses show the presence of both S and O. Conversion efficiencies of complete devices up to 14 % are obtained.
引用
收藏
页码:93 / 100
页数:8
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