Morphology and optical investigations of ZnO pyramids and nanoflakes for optoelectronic applications

被引：35
作者：
Hassan, N. K. [1 ]
Hashim, M. R. [2 ]
Al-Douri, Y. [3 ]
机构：
[1] Tikrit Univ, Dept Phys, Coll Educ, Tikrit, Iraq
[2] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res Lab, George Town 11800, Malaysia
[3] Univ Malaysia Perlis, Inst Nano Elect Engn, Kanger 01000, Perlis, Malaysia
来源：
OPTIK | 2014年 / 125卷 / 11期
关键词：
ZnO; Characterization; Optical properties; ELECTROCHEMICAL DEPOSITION; REFRACTIVE-INDEX; BULK MODULUS; EPITAXIAL-GROWTH; NANOSTRUCTURES; DEPENDENCE; TEMPERATURE; PRESSURE; NANORODS; SILICON;
D O I：
10.1016/j.ijleo.2013.10.023
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Zinc-oxide (ZnO) pyramidal and nanoflakes were grown by electrochemical deposition of Zn(NO3)(2)center dot 6H(2)O on n-type Si substrate with different crystallographic orientations and on indium tin oxide (ITO)-coated glass. Various morphological shapes of deposited ZnO nanostructures were observed, which were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The bulk modulus was calculated to determine the material stiffness. Two peaks were observed at room temperature photoluminescence spectrum, i.e., a near-band-edge (NBE) emission in the UV region and a broad deep-level emission (DLE) in the green emission region. The optical properties were Calculated to confirm the specific models validity of ZnO nanostructures for optoelectronics. The measured and calculated values show good agreement with other data. (C) 2013 Elsevier GmbH. All rights reserved.
引用
收藏
页码：2560 / 2564
页数：5
相关论文
共 62 条
[1]   High sensitivity of palladium on porous silicon MSM photodetector [J].
Abd Rahim, A. F. ;
Hashim, M. R. ;
Ali, N. K. .
PHYSICA B-CONDENSED MATTER, 2011, 406 (04) :1034-1037
[2]   A comparative analysis of deep level emission in ZnO layers deposited by various methods [J].
Ahn, Cheol Hyoun ;
Kim, Young Yi ;
Kim, Dong Chan ;
Mohanta, Sanjay Kumar ;
Cho, Hyung Koun .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)
[3]   Correlation between the bulk modulus and the transition pressure in semiconductors [J].
Al-Douri, Y ;
Abid, H ;
Aourag, H .
MATERIALS LETTERS, 2005, 59 (16) :2032-2034
[4]   Empirical formula relating the bulk modulus to the lattice constant in tetrahedral semiconductors [J].
Al-Douri, Y ;
Abid, H ;
Aourag, H .
MATERIALS CHEMISTRY AND PHYSICS, 2004, 87 (01) :14-17
[5]   Optical properties of GaN nanostructures for optoelectronic applications [J].
Al-Douri, Y. .
MALAYSIAN TECHNICAL UNIVERSITIES CONFERENCE ON ENGINEERING & TECHNOLOGY 2012 (MUCET 2012), 2013, 53 :400-404
[6]   Electronic and optical properties of ZnxCd1-xSe [J].
Al-Douri, Y .
MATERIALS CHEMISTRY AND PHYSICS, 2003, 82 (01) :49-54
[7]   Optical investigations using ultra-soft pseudopotential calculations of Si0.5Ge0.5 alloy [J].
Al-Douri, Y. ;
Feng, Y. P. ;
Huan, A. C. H. .
SOLID STATE COMMUNICATIONS, 2008, 148 (11-12) :521-524
[8]   Calculation of bulk moduli of semiconductor compounds [J].
Al-Douri, Y ;
Abid, H ;
Aourag, H .
PHYSICA B-CONDENSED MATTER, 2002, 322 (1-2) :179-182
[9]   Correlation between the bulk modulus and the charge density in semiconductors [J].
Al-Douri, Y ;
Abid, H ;
Aourag, H .
PHYSICA B, 2001, 305 (02) :186-190
[10]   Pressure dependence of the refractive index of diamond, cubic silicon carbide and cubic boron nitride [J].
Balzaretti, NM ;
daJornada, JAH .
SOLID STATE COMMUNICATIONS, 1996, 99 (12) :943-948
1234567