Nanocrystalline Diamond for Near Junction Heat Spreading in GaN Power HEMTs

被引：12

作者：

Anderson, T. J. ^{[1
]}

Hobart, K. D. ^{[1
]}

Tadjer, M. J. ^{[1
]}

Koehler, A. D. ^{[1
]}

Feygelson, T. I. ^{[1
]}

Pate, B. B. ^{[1
]}

Hite, J. K. ^{[1
]}

Kub, F. J. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

来源：

WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15 | 2014年 / 61卷 / 04期

关键词：

D O I：

10.1149/06104.0045ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Reduced performance in Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed "gate after diamond," is shown to improve the thermal budget of the deposition process and enable large-area diamond in a reliable and scalable way without degrading the gate metal. This work will highlight initial assessments of top-side diamond integration in GaN HEMTs as well as development efforts on back-side diamond coatings and diamond contacts for further improvements to the thermal management scheme.

引用

页码：45 / 49

页数：5

共 5 条

[1]

Anderson T.J., 2013, CS MANTECH

[2] Nanocrystalline Diamond-Gated AlGaN/GaN HEMT [J].