Scaling limits of organic digital circuits

被引:22
作者
Risteska, Anita [1 ]
Myny, Kris [2 ]
Steudel, Soeren [2 ]
Nakamura, Masakazu [3 ]
Knipp, Dietmar [1 ]
机构
[1] Jacobs Univ Bremen, Res Ctr Funct Mat & Nanomol Sci, Elect Devices & Nanophoton Lab, D-28759 Bremen, Germany
[2] IMEC, B-3001 Louvain, Belgium
[3] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan
关键词
Organic transistors; Contact resistance; Static noise margin; Propagation delay; Scaling limits; RFID; THIN-FILM TRANSISTORS; PENTACENE; MORPHOLOGY;
D O I
10.1016/j.orgel.2013.11.028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of device scaling on organic circuits' performance was studied. Particularly, the influence of contact resistance on the static and the dynamic behavior of the circuits was investigated. For that purpose, an analytical model describing the voltage transfer characteristics (VTCs) and the propagation delay was developed. Using the model, it was shown that for OTFTs with channel lengths of less than 10 mu m the contact resistance has negative influence on both, the static noise margin (SNM) and the propagation delay. Moreover, the model is in a good agreement with experimentally measured data. Scaling the lateral dimensions of the transistors down to few mu m limits the circuit performance due to contact effects, and the 1-10 MHz frequency range operation required by some applications can only be achieved by reducing the specific contact resistance, rho c, 10-100 times. This need for rho c reduction highlights the importance of improving charge injection in organic transistors that can usually be achieved by contact doping like in inorganic electronics. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:461 / 469
页数:9
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