Study of Alq3 thermal evaporation rate effects on the OLED

被引：49
作者：
Lee, CB
Uddin, A
Hu, X
Andersson, TG
机构：
[1] Nanyang Technol Univ, Sch Mat Engn, Singapore 639798, Singapore
[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 112卷 / 01期
关键词：
deposition rate; thermal evaporation; Alq(3); OLED;
D O I：
10.1016/j.mseb.2004.05.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical and optical characteristic, surface morphology and nitrogen/carbon ratio of tris-(8-hydroxyquinoline) aluminum (Alq(3)) were studied as a function of thermal evaporation rate. When the deposition rate increased from 0.3 to 1.5 Angstrom/s, the luminescence efficiency of OLED increased about three times. The X-ray photoelectron spectroscopy (XPS) measurements showed that as the Alq(3) deposition rate increased, the film had less N-containing species. AFM measurements showed that the surface roughness of the Alq(3) films decreased from 4.4 to 1.0 run with deposition rates. These changed Alq(3) film composition and surface morphology are believed to have effects on the electrical and luminance performance. (C) 2004 Elsevier B.V. All rights reserved.
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页码：14 / 18
页数：5
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