Formation of self-assembled InGaAs quantum dot arrays aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs

被引：16

作者：

Akiyama, Y. ^{[1
]}

Sakaki, H. ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期

关键词：

D O I：

10.1063/1.2370426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dense and highly ordered arrays of self-assembled InGaAs quantum dots are formed by molecular beam epitaxy along multiatomic steps on vicinal (111)B GaAs. This unique structure has been synthesized by depositing a nominally 3-nm-thick In0.3Ga0.7As layer onto a periodically corrugated surface prepared on a GaAs substrate tilted 8.5 degrees from (111)B. Each dot is typically 30-50 nm in lateral size and about 4 nm in height. Accumulation and release processes of strains in InGaAs layers deposited on stepped surfaces are discussed to suggest a possible mechanism for the aligned dot formation. (c) 2006 American Institute of Physics.

引用

页数：3

共 24 条

[1] Molecular beam epitaxial growth of AlGaAs/InGaAs/GaAs planar superlattice structures on vicinal (111)B GaAs and their transport properties [J].

Akiyama, Y ;

Kawazu, T ;

Noda, T ;

Koshiba, S ;

Torii, K ;

Sakaki, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03) :1162-1165

[2] Double heterostructure lasers: Early days and future perspectives [J].

Alferov, Z .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (06) :832-840

[3] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[4] Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs [J].

Bauer, J ;

Schuh, D ;

Uccelli, E ;

Schulz, R ;

Kress, A ;

Hofbauer, F ;

Finley, JJ ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 2004, 85 (20) :4750-4752

[5] Self-organized GaAs quantum-wire lasers grown on (775) B-oriented GaAs substrates by molecular beam epitaxy [J].

Higashiwaki, M ;

Shimomura, S ;

Hiyamizu, S ;

Ikawa, S .

APPLIED PHYSICS LETTERS, 1999, 74 (06) :780-782

[6] High-density GaAs/AlAs quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy [J].

Higashiwaki, M ;

Yamamoto, M ;

Higuchi, T ;

Shimomura, S ;

Adachi, SA ;

Okamoto, Y ;

Sano, N ;

Hiyamizu, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (5B) :L606-L608

[7] Reflection high-energy electron diffraction scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation [J].

Joyce, BA ;

Jones, TS ;

Belk, JG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2373-2380

[8] Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures [J].

Lee, SW ;

Hirakawa, K ;

Shimada, Y .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1428-1430

[9] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[10] Formation of multi-atomic steps and novel n-AlGaAs/GaAs heterojunctions on vicinal(111)B substrates by MBE and anisotropic transport of 2D electrons [J].

Nakamura, Y ;

Koshiba, S ;

Sakaki, H .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :1092-1096

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