First-principles Study of Antisite Defects in Orthorhombic PbZrO3

被引:4
作者
Chotsawat, Maneerat [1 ,2 ]
Sarasamak, Kanoknan [1 ,2 ,3 ]
Thanomngam, Pitiporn [1 ,2 ,3 ]
T-Thienprasert, Jiraroj [4 ]
机构
[1] King Mongkuts Inst Technol Ladkrabang, Coll Nanotechnol, Bangkok 10520, Thailand
[2] Commiss Higher Educ, Thailand Ctr Excellence Phys ThEP Ctr, Bangkok 10400, Thailand
[3] King Mongkuts Inst Technol Ladkrabang, Nanotec KMITL Ctr Excellence Nanoelect Device, Bangkok 10520, Thailand
[4] Univ Bangkok, Dept Phys, Fac Sci, Bangkok 10900, Thailand
关键词
Orthorhombic PbZrO3; first-principles calculations; antisite defects; THIN-FILMS; LEAD; PEROVSKITE; VACANCY; EXCESS; ZR;
D O I
10.1080/10584587.2014.906291
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
First-principles calculations based on density functional theory (DFT) within local density approximation were employed to investigate the antisite defects, including Pb-Zr and Zr-Pb, in orthorhombic PbZrO3 by determining their defect formation energies. The formation energies of antisite defects were then compared with those of other dominant defects, i.e., lead Pb, zirconium Zr, and oxygen O vacancies to examine the likelihood of their existence. Our results revealed that Pb-Zr defect in neutral charge state is the most dominant defect under O-rich or oxidizing condition in agreement with the previous work. In addition, there is a little structural relaxation when the Zr atom is replaced by Pb atom to form Pb-Zr defect in neutral charge state. In opposite, under O-poor or reducing condition, the formation energies of antisite defects are quite high and higher than those of vacancy defects. This suggests that antisite defects are unlikely to form under reducing condition.
引用
收藏
页码:86 / 92
页数:7
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