pH Sensing of Ba0.7Sr0.3TiO3/SiO2 Film for Metal-Oxide-Semiconductor and Ion-Sensitive Field-Effect Transistor Devices

被引：6

作者：

Chen, Chun-Yuan ^{[1
,3
]}

Chou, Jung-Chuan ^{[2
]}

Chou, Hsueh-Tao ^{[2
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Grad Sch Engn Sci & Technol, Yunlin 640, Taiwan

[2] Natl Yunlin Univ Sci & Technol, Grad Sch Elect Engn, Yunlin 640, Taiwan

[3] Chung Chou Inst Technol, Dept Comp Sci & Informat Engn, Yuanlin 510, Changhua, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 06期

关键词：

barium compounds; ferroelectric materials; ion sensitive field effect transistors; MIS devices; pH; semiconductor thin films; silicon compounds; sputtering; (BA; SR)TIO3; THIN-FILMS; PT/(BA; SR)TIO3/PT CAPACITORS; ELECTRICAL-CONDUCTION; PERFORMANCE; HYSTERESIS; ELECTRODES; DIOXIDE;

D O I：

10.1149/1.3086749

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The H+-sensing behaviors of barium strontium titanate (BST) ultrathin films are reported. The sputtering technique was used to prepare the Ba0.7Sr0.3TiO3 ferroelectric structure. To obtain better electrical characteristics for the BST membrane, we characterized electrical properties of the BST/SiO2 thin film for the gate oxides in the metal-oxide-semiconductor devices under different deposition times of 10, 20, and 30 min using high frequency capacitance-voltage and current-voltage measurements. The pH-sensing properties of the stack BST/SiO2 layers were also investigated using capacitance-voltage measurements on the electrolyte/insulator/semiconductor. The results show that BST ultrathin film (< 30 nm) still exhibits linear pH sensitivities of approximately 50-58 mV/pH ranging from pH 1 to 11. Besides, the drift rate and temperature dependence of the measured pH sensitivity has also been represented.

引用

页码：G59 / G64

页数：6

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