Growth of of layered superconductor β-PdBi2 films using molecular beam epitaxy

被引：10

作者：

Denisov, N. V. ^{[1
]}

Matetskiy, A. V. ^{[1
]}

Tupkalo, A. V. ^{[1
]}

Zotov, A. V. ^{[1
,2
,3
]}

Saranin, A. A. ^{[1
,2
]}

机构：

[1] RAS, Inst Automat & Control Proc FEB, 5 Radio St, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

[3] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia

来源：

APPLIED SURFACE SCIENCE | 2017年 / 401卷

关键词：

Atom solid interactions; Bismuth; Palladium; Superconductivity; SINGLE;

D O I：

10.1016/j.apsusc.2016.12.239

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Bulk,beta-PdBi2 layered material exhibits advanced properties and is supposed to be probable topological superconductor. We present a method based on molecular beam epitaxy that allows us to grow beta-PdBi2 films from a single,beta-PdBi2 triple layer up to the dozens of triple layers, using Bi(111) film on Si(111) as a template. The grown films demonstrate structural, electronic and superconducting properties similar to those of bulk, beta-PdBi2 crystals. Ability to grow the beta-PdBi2 films of desired thickness opens the promising possibilities to explore fascinating properties of this advanced material. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：142 / 145

页数：4

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