Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2, MoS2, and WSe2

被引：127

作者：

Blundo, E. ^{[1
]}

Felici, M. ^{[1
]}

Yildirim, T. ^{[2
]}

Pettinari, G. ^{[3
]}

Tedeschi, D. ^{[1
]}

Miriametro, A. ^{[1
]}

Liu, B. ^{[2
]}

Ma, W. ^{[2
]}

Lu, Y. ^{[2
,4
]}

Polimeni, A. ^{[1
]}

机构：

[1] Sapienza Univ Roma, Dipartimento Fis, I-00185 Rome, Italy

[2] Australian Natl Univ, Coll Engn & Comp Sci, Res Sch Elect Energy & Mat Engn, Canberra, ACT 2601, Australia

[3] CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy

[4] ARC Ctr Excellence Future Low Energy Elect Techno, Canberra, ACT 2601, Australia

来源：

PHYSICAL REVIEW RESEARCH | 2020年 / 2卷 / 01期

基金：

欧盟地平线“2020”; 澳大利亚研究理事会;

关键词：

MONOLAYER;

D O I：

10.1103/PhysRevResearch.2.012024

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of bulk WS2 and the ensuing formation of 1-ML-thick, H-2-filled domes. The electronic properties of the curved MLs are mapped by spatially and time-resolved microphotoluminescence, revealing the mechanical stress conditions that trigger the variation of the band gap character. This general phenomenon, also observed in MoS2 and WSe2, further increases our understanding of the electronic structure of transition metal dichalcogenide MLs and holds a great relevance for their optoelectronic applications.

引用

页数：7

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