Simulation of single-electron/CMOS hybrid circuits using SPICE macro-modeling

被引:0
作者
Yu, YS [1 ]
Jung, YI
Park, JH
Hwang, SW
Ahn, D
机构
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
[2] Univ Seoul, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The macro-modeling technique of single electron transistors has been applied to the SPICE simulation of single-electron/CMOS hybrid circuits. Several hybrid circuits such as an SET-NMOS pair and a single electron NOR-gate with CMOS buffers have been simulated and efficient interface characteristics have been demonstrated. This technique is simple to perform and does not require any modification of the SPICE internal source code.
引用
收藏
页码:S991 / S994
页数:4
相关论文
共 12 条
[1]   Single-electron transistor logic [J].
Chen, RH ;
Korotkov, AN ;
Likharev, KK .
APPLIED PHYSICS LETTERS, 1996, 68 (14) :1954-1956
[2]   Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor [J].
Choi, BH ;
Hwang, SW ;
Kim, IG ;
Shin, HC ;
Kim, Y ;
Kim, EK .
APPLIED PHYSICS LETTERS, 1998, 73 (21) :3129-3131
[3]   A NUMERICAL STUDY OF THE DYNAMICS AND STATISTICS OF SINGLE-ELECTRON SYSTEMS [J].
FONSECA, LRC ;
KOROTKOV, AN ;
LIKHAREV, KK ;
ODINTSOV, AA .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) :3238-3251
[4]   Overview of nanoelectronic devices [J].
Goldhaber-Gordon, D ;
Montemerlo, MS ;
Love, JC ;
Opiteck, GJ ;
Ellenbogen, JC .
PROCEEDINGS OF THE IEEE, 1997, 85 (04) :521-540
[5]   A silicon single-electron transistor memory operating at room temperature [J].
Guo, LJ ;
Leobandung, E ;
Chou, SY .
SCIENCE, 1997, 275 (5300) :649-651
[6]  
UCHIDA K, 1998, SIL NAN WORKSH, P59
[7]   SIMON - A simulator for single-electron tunnel devices and circuits [J].
Wasshuber, C ;
Kosina, H ;
Selberherr, S .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1997, 16 (09) :937-944
[8]  
YANO K, 1997, SSDM 98, P186
[9]  
Yu YS, 1999, IEEE T ELECTRON DEV, V46, P1667, DOI 10.1109/16.777155
[10]  
Yu YS, 1998, J KOREAN PHYS SOC, V33, pS269