A Dual-Band Dual-Polarized Stacked Microstrip Antenna With High-Isolation and Band-Notch Characteristics for 5G Microcell Communications

被引:43
作者
Feng, Botao [1 ]
Li, Lei [1 ]
Cheng, Jui-Ching [2 ]
Sim, Chow-Yen-Desmond [3 ]
机构
[1] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China
[2] Natl Taipei Univ Technol, Dept Elect Engn, Taipei 106, Taiwan
[3] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan
关键词
Band notch; dual-polarized antenna; high gain; high-isolation; stacked microstrip antenna; PATCH ANTENNA; ARRAY;
D O I
10.1109/TAP.2019.2911619
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A dual-band dual-polarized stacked microstrip antenna with high-isolation and band-notch characteristics is proposed. The proposed antenna is comprised of three layers of substrate. To obtain high isolation between two input ports, a pair of orthogonal differentially driven feeding lines are printed on the top side of the bottom layer. To yield the desired lower-and upper-frequency bandwidths for 5G microcell communications, two sets of 2x2 radiating patch arrays are printed on the second and top layer substrates, respectively. Compared with the conventional microstrip antenna, besides demonstrating a smaller size of 0.48 x 0.48 x 0.085 lambda(3)(0), the proposed antenna has also exhibited higher isolation of better than 40 dB and higher gain of >8 dBi. Finally, a novel technique of arranging four meander lines that connects the four array elements printed on the second layer substrate is proposed to achieve an adjustable band-notch characteristic.
引用
收藏
页码:4506 / 4516
页数:11
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