Molecular beam epitaxy of single unit- cell FeSe superconducting films on SrTiO3 (001)

被引:5
作者
Wang Meng [1 ,3 ]
Ou Yun-Bo [3 ]
Li Fang-Sen [2 ,3 ]
Zhang Wen-Hao [2 ,3 ]
Tang Chen-Jia [2 ,3 ]
Wang Li-Li [2 ,3 ]
Xue Qi-Kun [2 ]
Ma Xu-Cun [2 ,3 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China
[2] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[3] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
SrTiO3(001); single unit-cell FeSe films; high temperature superconductivity; molecular beam epitaxy; PHASE TRANSITION; SURFACE;
D O I
10.7498/aps.63.027401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on our previous work, we have systematically investigated the molecular beam epitaxy growth of single unit-cell FeSe films on SrTiO3(001) substrates and studied the surface morphology by scanning tunneling microscopy. We found that there are three key steps to obtain large-scale uniform one unit-cell superconducting FeSe films. First, the STO(001) substrates should be treated by HCl etching and thermal annealing under oxygen flux so that a specific TiO2- terminated STO(001) surface with well-defined step-terrace structure could be obtained. Second, the Fe and Se fluxes and substrate temperature have to be controlled delicately. At last, post-growth annealing is also critical, which can remove extra Se adatoms, and more importantly facilitate the necessary electron transfer for superconductivity transition.
引用
收藏
页数:5
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